Design and Operation of CMOS-Compatible Electron Pumps Fabricated With Optical Lithography

We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on th...

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Bibliographic Details
Published in:IEEE electron device letters 2017-04, Vol.38 (4), p.414-417
Main Authors: Clapera, P., Klochan, J., Lavieville, R., Barraud, S., Hutin, L., Sanquer, M., Vinet, M., Cinins, A., Barinovs, G., Kashcheyevs, V., Jehl, X.
Format: Article
Language:English
Subjects:
Adiabatic
Condensed Matter
Cryogenics
Current control
Engineering Sciences
Impurities
Lithography
Logic gates
Micro and nanotechnologies
Microelectronics
Optical device fabrication
Optical pumping
Physics
Quantization
Quantum dots
Quantum effect semiconductor devices
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Description
Summary:We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is demonstrated in the non-adiabatic pumping regime, with a pumping frequency up to 300MHz. We also identify and model signatures of charge traps affecting charge pumping in the adiabatic regime. The availability of quantized current references in a process close to the 28FDSOI technology could trigger new applications for these pumps and allow to cointegrate them with cryogenic CMOS circuits, for instance in the emerging field of interfaces with quantum bits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2670680