Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse

The electronic synapse, which can vividly emulate short-term and long-term plasticity, as well as voltage sensitivity, in the bio-synapse, is the vital device foundation for brain-inspired neuromorphic computing. In this letter, we propose a Ag/GeSe/TiN memristor as an electronic synapse for brain-i...

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Bibliographic Details
Published in:IEEE electron device letters 2018-04, Vol.39 (4), p.492-495
Main Authors: Sun, Yi, Xu, Hui, Liu, Sen, Song, Bing, Liu, Haijun, Liu, Qi, Li, Qingjiang
Format: Article
Language:English
Subjects:
Brain-inspired neuromorphic computing
Electrodes
Electromigration
electronic synapse
low voltage
memristor
Memristors
Neuromorphics
Sensitivity
Switches
Synapses
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Summary:The electronic synapse, which can vividly emulate short-term and long-term plasticity, as well as voltage sensitivity, in the bio-synapse, is the vital device foundation for brain-inspired neuromorphic computing. In this letter, we propose a Ag/GeSe/TiN memristor as an electronic synapse for brain-inspired neuromorphic applications. Due to the electromigration and diffusion of Ag cation, the volatile and non-volatile switching behaviours are coexistent in this device. Various synaptic functions, including short-term plasticity, long-term plasticity, pair-pulse facilitation, and spike timing-dependent plasticity, have been successfully eliminated in Ag/GeSe/TiN devices. Furthermore, all the synaptic functions are induced by the spiking stimuli with amplitudes of several hundred millivolts. All the results demonstrate that the Ag/GeSe/TiN device has great potential for brain-inspired computing systems in the future.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2018.2809784