A back-wafer contacted silicon-on-glass integrated bipolar process. Part I. The conflict electrical versus thermal isolation

A novel silicon-on-glass integrated bipolar technology is presented. The transfer to glass is performed by gluing and subsequent removal of the bulk silicon to a buried oxide layer. Low-ohmic collector contacts are processed on the back-wafer by implantation and dopant activation by excimer laser an...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2004-01, Vol.51 (1), p.42-50
Main Authors: Nanver, L.K., Nenadovic, N., d'Alessandro, V., Schellevis, H., van Zeijl, H.W., Dekker, R., de Mooij, D.B., Zieren, V., Slotboom, J.W.
Format: Article
Language:English
Subjects:
Accumulators
Activation
Bipolar integrated circuits
Bipolar transistors
Capacitance
Collectors
Devices
Electrical measurement
Implantation
Ion implantation
Isolation technology
Ohmic contacts
Semiconductor device doping
Silicon on insulator technology
Thermal resistance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A novel silicon-on-glass integrated bipolar technology is presented. The transfer to glass is performed by gluing and subsequent removal of the bulk silicon to a buried oxide layer. Low-ohmic collector contacts are processed on the back-wafer by implantation and dopant activation by excimer laser annealing. The improved electrical isolation with reduced collector-base capacitance, collector resistance and substrate capacitance, also provide an extremely good thermal isolation. The devices are electrothermally characterized in relationship to different heat-spreader designs by electrical measurement and nematic liquid crystal imaging. Accurate values of the temperature at thermal breakdown and thermal resistance are extracted from current-controlled Gummel plot measurements.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.820653