Why is it that differently doped regions in semiconductors are visible in low voltage SEM?

• Published in: IEEE transactions on electron devices 2004-02, Vol.51 (2), p.288-292
• Main Authors: El-Gomati, M.M., Wells, T.C.R., Mullerova, I., Frank, L., Jayakody, H.
• Format: Article
• Language: English
• Subjects: Atomic properties; Coatings; Electric contacts; Electron microscopy; Electronics; Low voltage; Microscopes; Scanning electron microscopy; Semiconductor device doping; Semiconductor device modeling; Semiconductors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2003.821884

Although doped regions in semiconductors have been shown to give a different secondary electron yield in low-voltage scanning electron microscopy, the basic interpretation of this contrast has been difficult. It is accepted that this contrast stem from electronic phenomenon rather than atomic number differences between differently doped regions. However, the question is whether variations in the patch fields above the sample surface, balancing variations in the inner potentials, or surface coatings and/or surface states are the mechanisms responsible for the observed contrast. The present study reports on comparative experiments of these two models and demonstrates that the image contrast can be controlled by the presence of thin-surface metallic coatings. These results are the first evidence of the adlayer contacts, i.e., the subsurface electric fields instead of the patch fields above the surface, being responsible for the secondary electron contrast of doped semiconductors imaged in low voltage scanning electron microscopes under standard vacuum conditions, and they pave the way for the routine use of this method in semiconductor research and industry.