Influence of interface traps and surface mobility degradation on scanning capacitance microscopy measurement

Although scanning capacitance microscopy (SCM) is based on the MOS capacitance theory, the measurement frequency is 915-MHz instead of 100 kHz to 1 MHz in conventional MOS capacitance-voltage measurement. At this high frequency, the reactance of the probe tip-to-substrate capacitance can become smal...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-09, Vol.51 (9), p.1496-1503
Main Authors: Hong, Y.D., Yew Tong Yeow, Chim, W.-K., Kin-Mun Wong, Kopanski, J.J.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Compound structure devices
Degradation
Electron microscopy
Electronics
Exact sciences and technology
High frequencies
Interface phenomena
Inversion layers
Metal oxide semiconductors
Microscopy
MOS capacitors
Reactance
Scanning
Semiconductor device doping
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
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Description
Summary:Although scanning capacitance microscopy (SCM) is based on the MOS capacitance theory, the measurement frequency is 915-MHz instead of 100 kHz to 1 MHz in conventional MOS capacitance-voltage measurement. At this high frequency, the reactance of the probe tip-to-substrate capacitance can become smaller than the series resistance of the substrate inversion layer, particularly when the surface mobility is degraded. The response of the oxide-silicon interface traps to SCM measurement is also different due to the use of a 10-kHz signal to determine dC/dV. In this paper, we compare experimental and simulation data to demonstrate the effects of interface traps and surface mobility degradation on SCM measurement. Implications on the treatment of SCM data for accurate dopant profile extraction are also presented.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.833590