Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp 3 d 5 s* tight-binding model. An interface between silicon and silicon dioxide...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-05, Vol.58 (5), p.1371-1380
Main Authors: SungGeun Kim, Luisier, M, Paul, A, Boykin, T B, Klimeck, G
Format: Article
Language:English
Subjects:
Applied sciences
Atomic layer deposition
Atomistic
Computer simulation
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
full-band simulations
Interface roughness
interface roughness scattering (IRS)
Materials science
Mathematical analysis
Mathematical models
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanowires
Phonons
Physics
Quantum wires
Rough surfaces
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Si gate-all-around (GAA) nanowire (NW) transistors
Silicon
Silicon dioxide
Surface roughness
Threshold voltage
Transistors
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Summary:The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp 3 d 5 s* tight-binding model. An interface between silicon and silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function. An oxide layer is modeled in a virtual crystal approximation using fictitious SiO 2 atoms. 〈110〉-oriented NWs with different diameters and randomly generated surface configurations are studied. An experimentally observed on-current and threshold voltage are quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental data.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2118213