The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs

The electron mobility in strained ultra-thin InGaAs-on-InP MOSFETs is investigated combining band-structure and physics-based modeling including all relevant scattering mechanisms and effects. The most important effect is Fermi-level pinning which occurs due to high density of interface states at In...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-07, Vol.65 (7), p.2784-2789
Main Authors: Krivec, Sabina, Poljak, Mirko, Suligoj, Tomislav
Format: Article
Language:English
Subjects:
Dispersion
Effective mass
Electron mobility
Fermi-level pinning (FLP)
Indium gallium arsenide
InGaAs
InP
Interface states
interface states charge
strain
Tensile strain
ultra-thin body
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Summary:The electron mobility in strained ultra-thin InGaAs-on-InP MOSFETs is investigated combining band-structure and physics-based modeling including all relevant scattering mechanisms and effects. The most important effect is Fermi-level pinning which occurs due to high density of interface states at InGaAs/oxide interface. Different interface states densities are considered in order to investigate impact of interface states on electron mobility in biaxially strained ultra-thin InGaAs-on-InP structures. We report the tensile biaxial strain values that can alleviate the unfavorable impact of interface states charge on electron transport.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2838681