3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current-voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeare...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-05, Vol.68 (5), p.2556-2563
Main Authors: Reaz, Mahmud, Tonigan, Andrew M., Li, Kan, Smith, M. Brandon, Rony, Mohammed W., Gorchichko, Mariia, O'Hara, Andrew, Linten, Dimitri, Mitard, Jerome, Fang, Jingtian, Zhang, En Xia, Alles, Michael L., Weller, Robert A., Fleetwood, Daniel M., Reed, Robert A., Fischetti, Massimo V., Pantelides, Sokrates T., Weeden-Wright, Stephanie L., Schrimpf, Ronald D.
Format: Article
Language:English
Subjects:
3-D electron transport
Coulomb interactions
Current voltage characteristics
Electron distribution
Electron energy
Energy
Energy distribution
ENGINEERING
Gallium arsenide
gate-all-around (GAA)
High energy electrons
Hot electrons
Hydrogen-based energy
Logic gates
Monte Carlo (MC)
Monte Carlo simulation
MOSFETs
Nanowires
plasma scattering
Plasmas
radiation effects
reliability
Scattering
Semiconductor process modeling
Si technology
Silicon
Simulation
Solid modeling
source depletion
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Summary:The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current-voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3068328