Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability

• Published in: IEEE transactions on electron devices 2024-11, Vol.71 (11), p.7199-7203
• Main Authors: Wei, Jie, Lu, Jinlong, Dai, Kaiwei, Tan, Jialei, Liu, Renkuan, Zhu, Pengchen, Li, Hui, Zhang, Bo, Luo, Xiaorong
• Format: Article
• Language: English
• Subjects: Cathodes; Conductivity; Electrons; Insulated gate bipolar transistors; Logic gates; Modulation; ON-state voltage drop (Von); pMOS; self-adaptive; short-circuit; silicon on insulator (SOI)-lateral insulated gate bipolar transistor (LIGBT); Turning; turnoff loss
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2024.3454035

An ultralow loss lateral insulated gate bipolar transistor (LIGBT) with high short-circuit capability is proposed and investigated by simulations. The proposed LIGBT features integrated double pMOS at the cathode side of a conventional LIGBT (Con. LIGBT) (named as IDP LIGBT), wherein pMOS1 is the depletion mode and pMOS2 is the enhancement mode. The potential {V}_{\text {P}} / {V}_{\text {N}} of cathode P+/N+ regions are self-adaptively modulated by the pMOS2 and pMOS1. In the on -state, the parasitic diode {D}1 (p-well/cathode N+ region) of IDP LIGBT is turned on to enhance the conductivity modulation effect and then achieve a low on -state voltage drop ( {V}_{\text {on}} ). During the turning off period, the pMOS2 is turned on before the main gate of LIGBT turning off to extract holes from the p-well quickly and decrease the {V}_{\text {P}} , which turns off {D}1 and makes less carriers needed to be extracted. Meanwhile, the pMOS1 channel is self-adaptively narrowed and depleted with the increasing {V}_{\text {AK}} , which elevates the {V}_{\text {N}} and then reduces the cathode electron injection efficiency. Therefore, the IDP LIGBT achieves an ultrafast switching speed and a low turnoff loss ( {E}_{\text {off}} ). In the short-circuit state with high V_{\text {AK}} , the pMOS1 is self-adaptively pinched off to reduce cathode electron injection efficiency and saturation current, so as to achieve a better short-circuit withstanding time ( {t}_{\text {SC}} ). Compared with the MOS resistor (MR) LIGBT, the IDP LIGBT decreases the {E}_{\text {off}} / {V}_{\text {on}}