Tunneling Magnetoresistance Simulation Used to Detect Domain-Wall Structures and Their Motion in a Ferromagnetic Wire

Devices consisting of single or double magnetic tunnel junctions (MTJs) with cross-magnetization configurations were proposed to enable simultaneous electrical detection of both the structure and motion of a domain wall (DW), and the operation of these devices was confirmed through micromagnetic sim...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2009-10, Vol.45 (10), p.3780-3783
Main Authors: Sawada, K., Uemura, T., Masuda, M., Matsuda, K.-i., Yamamoto, M.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Devices
Domain wall
Electric wire
electrical detection
Exact sciences and technology
Ferromagnetism
Fluid flow
Informatics
Magnetic cores
Magnetic domain walls
magnetic tunnel junction
Magnetic tunneling
Magnetism
Magnetization
Materials science
Micromagnetics
Motion detection
Other topics in materials science
Physics
Simulation
Time factors
tunnel magnetoresistance
Tunneling magnetoresistance
Vortices
Walls
Wire
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Summary:Devices consisting of single or double magnetic tunnel junctions (MTJs) with cross-magnetization configurations were proposed to enable simultaneous electrical detection of both the structure and motion of a domain wall (DW), and the operation of these devices was confirmed through micromagnetic simulation. Through the tunnel magnetoresistance (TMR) effect of the MTJs, two types of domain-wall structure formed in a ferromagnetic wire were clearly identified: a transverse wall (TW) in which the magnetization at the center of the wall is directed transverse to the wire axis, and a vortex wall (VW) in which the magnetization circulates in the plane about a small perpendicular vortex core. In addition to the structural difference between TW and VW, the velocity of the DW motion was detected through the time response of the TMR.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2009.2023863