Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology

Radiation particles are incident on an integrated circuit (IC) from all angles. For planar technologies, angular incidence increases the deposited charge in a given volume, resulting in higher collected charge at a node and more transistors collecting charge due to increased charge sharing. For FinF...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.491-496
Main Authors: Hangfang Zhang, Hui Jiang, Assis, Thiago R., Ball, Dennis R., Narasimham, Balaji, Anvar, Ali, Massengill, Lloyd W., Bhuva, Bharat L.
Format: Article
Language:English
Subjects:
Angular strike
charge track
cross-section
Cross-sections
Degradation
FinFET
FinFETs
Flip-flops
Heavy ions
Incidence angle
Insulation life
Integrated circuits
Ions
Radiation
Semiconductor devices
Silicon
Single event upsets
single-event upset
TCAD
Technology
Three-dimensional displays
Transistors
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Summary:Radiation particles are incident on an integrated circuit (IC) from all angles. For planar technologies, angular incidence increases the deposited charge in a given volume, resulting in higher collected charge at a node and more transistors collecting charge due to increased charge sharing. For FinFET technologies, the physical structure of a FinFET is very different from that of a planar transistor. As a result, deposited and collected charge at a node for angular incidences will be different from what has been published for planar technologies. 3D TCAD simulations and heavy-ion experiments were carried out to investigate the angular effects on flip-flop (FF) single-event upsets (SEU) at the 16-nm bulk FinFET technology. Results show different SEU cross-section trends for the FinFET technology compared to planar technologies. Results show increased upset probability and SEU cross-sections with increasing tilt angles, but those are reduced with increasing roll angles for low-LET heavy-ion incidence. The main reason for this behavior is posited to be variations in charge track length within active Si regions.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2637876