Modeling Transient Loss Due to Ionizing Particles in Silicon Photonic Waveguides

A general, computationally efficient, physics-based model for the continuous time-domain description of transient loss in silicon (Si) photonic waveguides due to impinging ionizing particles is presented. The model combines Beer-Lambert and Drude formalisms with the ambipolar transport equation (ATE...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2022-03, Vol.69 (3), p.518-526
Main Authors: Goley, Patrick S., Maggioni, Giovanni Maria, Preisler, Edward, Cressler, John D.
Format: Article
Language:English
Subjects:
Ambipolar diffusion
Computational modeling
drude model
free-carrier absorption (FCA)
Heavy ions
Ions
Lasers
Mathematical models
Nanosecond pulses
Optical losses
Optical materials
Optical waveguides
Particle physics
Photoelectric effect
Photonics
radiation effects
Silicon
silicon (Si) photonics
single-event effects (SEEs)
Transient analysis
Transport equations
Waveguides
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Summary:A general, computationally efficient, physics-based model for the continuous time-domain description of transient loss in silicon (Si) photonic waveguides due to impinging ionizing particles is presented. The model combines Beer-Lambert and Drude formalisms with the ambipolar transport equation (ATE) and applies a number of carefully vetted simplifying assumptions to obtain a highly compact form. The model is validated using nanosecond pulses of tightly focused 639-nm laser light to induce localized high-level generation events and mimic heavy-ion strikes within Si photonic waveguides of varying geometry. Electron-hole pairs (ehps) generated in these events cause free-carrier absorption (FCA) of a continuous 1535-nm probe signal in the waveguide, which is observed as a transient drop in detected photocurrent on a high-speed oscilloscope. Measured transients show excellent agreement with model predictions.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2021.3133388