Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

We show that the anisotropies of second-harmonic-generation (SHG) intensities of singular and vicinal (111) and (001)Si–dielectric interfaces can be described accurately as dipole radiation originating from the anharmonic motion of bond charges parallel to the bond directions. This simplified bond-h...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-07, Vol.20 (4), p.1699-1705
Main Authors: Wang, J.-F. T., Powell, G. D., Johnson, R. S., Lucovsky, G., Aspnes, D. E.
Format: Article
Language:English
Subjects:
Anisotropy
Chemical bonds
Dielectric materials
Equations of motion
Fourier transforms
Interfaces (materials)
Least squares approximations
Polarization
Silica
Tensors
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Summary:We show that the anisotropies of second-harmonic-generation (SHG) intensities of singular and vicinal (111) and (001)Si–dielectric interfaces can be described accurately as dipole radiation originating from the anharmonic motion of bond charges parallel to the bond directions. This simplified bond-hyperpolarizability model not only provides a simpler and mathematically more efficient representation of SHG, but also allows a direct physical interpretation at the bond level, which was lacking in previous approaches. Application to oxidized and nitrided Si–SiO 2 interfaces provides new insight into bonding that occurs at these interfaces as well as the origin of SHG.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1493783