Electron bombardment of films used for reducing spurious charge in electrostatic electron optics

• Published in: Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-11, Vol.29 (6), p.06F317-06F317-5
• Main Authors: Maldonado, Juan R., Pease, Fabian, Hitzman, Charles J., Brodie, Alan D., Petric, Paul, Bevis, Chris, McCord, Mark, Tong, William M., Kidwingira, Francoise, Pianetta, Piero, Bibee, Matt, Mehta, Apurva, Bhatia, Ritwik
• Format: Article
• Language: English
• ISSN: 1071-1023; 2166-2746; 1520-8567; 2166-2754
• DOI: 10.1116/1.3663957

In electrostatic electron optics charging on the surfaces of insulators separating the electrodes can cause undesired beam fluctuation. In prior work, the authors showed that coating the insulators with a film deposited by atomic layer deposition (ALD) could lead to acceptably low charging effects in the reflection electron beam lithography system. However, the stability of the resistivity can also be affected by contaminants present in the vacuum environment of the electron beam tool. The mechanism of formation for carbon layers typically involves the cracking of hydrocarbon contaminants adsorbed on the film surface by photon, electrons, or heat. This work describes changes in resistivity of ALD films of zinc–zirconium oxide and tantalum–niobium oxide 40 nm thick under different operating conditions. In a vacuum system utilizing an oil rough pump and a turbo pump,