Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide

Chemical-mechanical polishing of sapphire with colloidal silicon dioxide has been studied with X-ray photoelectron spectroscopy. It has been found that aluminum silicate with the composition Al 2 SiO 5 is formed on the polished crystal surface. The silicon-containing layer thickness reaches 20.5 nm....

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Bibliographic Details
Published in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2012-02, Vol.6 (1), p.115-121
Main Authors: Vovk, E. A., Budnikov, A. T., Dobrotvorskaya, M. V., Krivonogov, S. I., Dan’ko, A. Ya
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
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Summary:Chemical-mechanical polishing of sapphire with colloidal silicon dioxide has been studied with X-ray photoelectron spectroscopy. It has been found that aluminum silicate with the composition Al 2 SiO 5 is formed on the polished crystal surface. The silicon-containing layer thickness reaches 20.5 nm. Its value decreases in the sequence of samples with (0001), ((10 2), and (11 0) and orientations. A mechanism by which Al 2 O 3 reacts with SiO 2 has been proposed. It has been revealed that sapphire samples with different crystallographic orientations exhibit an anisotropic rate of material removal. The anisotropy can be explained by a difference in the rate of the formation of intermediate products during chemical interaction between aluminum and silicon oxides on different planes.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451012020188