Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing

The research reported in this paper is based on an approach to low-temperature/low-thermal budget device fabrication that combines plasma and rapid thermal processing, and which has been customized to control separately i) the N-atom bonding chemistry and composition profiles, and ii) the structural...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1995, Vol.34 (12S), p.6827
Main Authors: Lucovsky, Gerald, Lee, David R., Hattangady, Sunil V., Niimi, Hiro, Jing, Ze, Parker, Chris, Hauser, John R.
Format: Article
Language:English
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Summary:The research reported in this paper is based on an approach to low-temperature/low-thermal budget device fabrication that combines plasma and rapid thermal processing, and which has been customized to control separately i) the N-atom bonding chemistry and composition profiles, and ii) the structural and chemical relaxations in stacked gate structures. Control of N-atom incorporation at the monolayer level at the crystalline- and polycrystalline-Si interfaces, and at alloy levels within the bulk dielectrics has been achieved by combining low-temperature (∼300° C) plasma-assisted processes to generate the N-atom concentration profiles, with low-thermal-budget rapid thermal annealing (RTA) to promote chemical and structural relaxations that minimize defects and defect precursors. Device measurements indicate that N-atom incorporation improves reliability with respect to hot carrier degradation of field effect transistors.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.6827