The Most Essential Factor for High-Speed, Low-Power 0.35 µm Complementary Metal-Oxide-Semiconductor Circuits Fabricated on Separation-by-Implanted-Oxygen (SIMOX) Substrates

• Published in: Japanese Journal of Applied Physics 1997-11, Vol.36 (11R), p.6699
• Main Authors: Yoshino, Akira, Kumagai, Kouichi, Hamatake, Nobuhisa, Susumu Kurosawa, Susumu Kurosawa, Koichiro Okumura, Koichiro Okumura
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.36.6699

We present experimental data concerning the propagation delay time and the power consumption of 0.35 µ m complementary metal-oxide-semiconductor (CMOS) gates (inverter, NAND, NOR) fabricated on the commercial standard high dose separation-by-implanted-oxygen (SIMOX) substrates. Each CMOS gate was composed of the fully depleted (FD) mode N- and P-type metal-oxide-semiconductor (NMOS and PMOS) transistors or the partially depleted (PD) mode ones with no body-contact. On the basis of the experimental data, together with SPICE simulation results, we show that the FD-mode is not the primary factor for high-speed, low-power performances of the CMOS/SIMOX circuits, but the reduced drain parasitic capacitance (both the bottom and the peripheral components) with the thin film silicon-on-insulator (SOI) structure is. Furthermore, we show the significance of the design and control of the transistor threshold voltage and/or the off-state leakage current for high-speed, low-power CMOS/SIMOX circuits.