Deep-Submicron Lightly-Doped-Drain and Single-Drain Metal-Oxide-Semiconductor Transistor Drain Current Model for Circuit Simulation

A new deep submicron I – V model for lightly-doped drain (LDD) and single-drain (SD) metal-oxide-semiconductor-field-effect-transistors (MOSFET) is presented. The physics-based and analytical model is developed using the drift-diffusion equation with a modified mobility formula to consider the effec...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-01, Vol.37 (1R), p.64
Main Authors: Liu, Shau-Shen, Jang, Sheng-Lyang
Format: Article
Language:English
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Summary:A new deep submicron I – V model for lightly-doped drain (LDD) and single-drain (SD) metal-oxide-semiconductor-field-effect-transistors (MOSFET) is presented. The physics-based and analytical model is developed using the drift-diffusion equation with a modified mobility formula to consider the effect of velocity overshoot and based on the quasi-two-dimensional Poisson equation. The drain-induced-barrier-lowering (DIBL), channel-length modulation, velocity overshoot, and parasitic source and drain resistances have been included in the model in a physically consistent manner. In this model, the LDD region is treated as a bias-dependent series resistance, and the drain-voltage drop across the LDD region has been considered in modeling the DIBL effect. This model is smoothly-continuous and valid in all regions of operation, its accuracy has been checked by comparing the calculated drain current, conductance and transconductance with the experimental data.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.64