Hole Trapping in Molecularly Doped Polymers: The Hoesterey-Letson Formalism

Hole trapping has been investigated in di- p -anisyl- p -tolylamine (DAT), tri- p -tolylamine (TTA), di- p -tolylphenylamine (DTP), and diphenyl- p -tolylamine (DPT) doped poly(styrene) containing different concentrations of tri- p -anislyamine (TAA). From oxidation potential measurements, TAA is a...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-01, Vol.38 (1R), p.117
Main Authors: Borsenberger, P. M., Gruenbaum, W. T., Magin, E. H., Schildkraut, D. E., Visser, S. A.
Format: Article
Language:English
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Summary:Hole trapping has been investigated in di- p -anisyl- p -tolylamine (DAT), tri- p -tolylamine (TTA), di- p -tolylphenylamine (DTP), and diphenyl- p -tolylamine (DPT) doped poly(styrene) containing different concentrations of tri- p -anislyamine (TAA). From oxidation potential measurements, TAA is a trap for DAT, TTA, DTP, and DPT with depths 0.07, 0.22, 0.27, and 0.34 eV, respectively. In such a way, it is possible to investigate the effect of trap depth using the same trap molecule. The mobilities decrease with increasing trap depth and concentration. For a TAA molar concentration of 10 -2 , the room temperature mobilities are suppressed by as much as four orders of magnitude. The results are compared to predictions of the Hoesterey-Letson formalism and discussed within the framework of the recent simulations of Wolf et al. . [Chem. Phys. 222 (1997) 259] and Borsenberger et al. . (submitted to Chem. Phys.)
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.117