Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

• Published in: Japanese Journal of Applied Physics 1999-02, Vol.38 (2R), p.631
• Main Authors: Youn, Doo-Hyeb, Lachab, Mohamed, Hao, Maosheng, Sugahara, Tomoya, Takenaka, Hironori, Naoi, Yoshiki, Sakai, Shiro
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.38.631

An investigation on the p-type activation in Mg-doped GaN epilayers has been carried out in relation to the defect structure. The samples were grown by the metalorganic chemical vapor deposition method. Sapphire with (0001) orientation (C-face) was used as the substrate. After growth, the samples were heat-treated under flowing N 2 , at temperatures ranging from 600 to 850°C. The p-type activation arises from the dissociation of electrically inactive Mg–H complexes and the neutralization of the dissociated H + during the annealing process. The annealing temperature dependence of hole concentration and hole mobility was studied. The p-type activation process resulted in a different maximum hole concentration and an optimum annealing temperature. Subsequent microstructural characterization of our samples revealed that the dislocations play a key role in p-type conductivity and may explain the difference observed in the electrical properties. Indeed, the analyses of transmission electron microscopy (TEM) images and X-ray diffraction (XRD) data show that Mg-doped GaN exhibits a different X-ray rocking curve full width at half maximum (FWHM) and dislocation density. Furthermore, it was found that the higher the dislocation density, the higher the hole concentration. Therefore, we suggest that dislocations could act as a migration path or a neutralizing source for dissociated hydrogen impurities.