Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition

High-density plasma chemical vapor deposition (HDP-CVD) is a deposition method of current interest for the gap-filling process of the intermetal dielectric (IMD) in semiconductor circuits. We first demonstrated that hydrogen ions drift into underlying thermal oxides during HDP-CVD with a SiH 4 –O 2...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-11, Vol.44 (11R), p.7863
Main Authors: Yamaguchi, Tadashi, Sawada, Mahito, Asai, Koyu, Kobayashi, Kiyoteru, Yoneda, Masahiro
Format: Article
Language:English
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Summary:High-density plasma chemical vapor deposition (HDP-CVD) is a deposition method of current interest for the gap-filling process of the intermetal dielectric (IMD) in semiconductor circuits. We first demonstrated that hydrogen ions drift into underlying thermal oxides during HDP-CVD with a SiH 4 –O 2 –Ar system, and that they degrade the reliability of gate oxides. The characteristics of the oxides were investigated using secondary ion mass spectroscopy (SIMS), thermal desorption spectroscopy (TDS), and capacitance–voltage ( C – V ) measurements of metal–oxide–semiconductor (MOS) capacitors. The hydrogen ions that are dissociated from SiH 4 in plasma penetrate into the HDP-CVD oxides, and some of the hydrogen ions in the HDP-CVD oxides drift into the underlying thermal oxides by rf bias. The drifting hydrogen creates two chemical bonding states and generates hole trap sites in the underlying thermal oxides.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.7863