Relationship between Excess Ga and Residual Oxides in Amorphous GaN Films Deposited by Compound Source Molecular Beam Epitaxy

Amorphous GaN (a-GaN) films were deposited at a low temperature below 500°C by compound-source molecular beam epitaxy (CS-MBE). The relationship between excess Ga and its oxidation in the deposited GaN films is reported. X-ray photoelectron spectroscopy (XPS) revealed that the excess Ga in deposited...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2005-12, Vol.44 (12R), p.8432
Main Authors: Obinata, Naoyuki, Sugimoto, Koichi, Ijima, Kazuyuki, Ishibiki, Masaya, Egawa, Shinichi, Honda, Tohru, Kawanishi, Hideo
Format: Article
Language:English
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Summary:Amorphous GaN (a-GaN) films were deposited at a low temperature below 500°C by compound-source molecular beam epitaxy (CS-MBE). The relationship between excess Ga and its oxidation in the deposited GaN films is reported. X-ray photoelectron spectroscopy (XPS) revealed that the excess Ga in deposited films was oxidized in the air and converted to gallium oxide. By increasing the substrate temperature, the total amount of gallium oxide in the deposited films decreased due to the reduction of the excess Ga. Cathodoluminescence (CL) intensity from the UV to the blue spectral regions increased with as the amount of gallium oxide in the deposited films decreased.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.8432