Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2006-04, Vol.45 (4S), p.3165
Main Authors: Ando, Takashi, Sato, Naoyuki, Hiyama, Susumu, Hirano, Tomoyuki, Nagaoka, Kojiro, Abe, Hitoshi, Okuyama, Atsushi, Ugajin, Hajime, Tai, Kaori, Fujita, Shigeru, Watanabe, Koji, Katsumata, Ryota, Idebuchi, Jun, Suzuki, Takashi, Hasegawa, Toshiaki, Iwamoto, Hayato, Kadomura, Shingo
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.3165