Hall Mobility and Scattering Mechanism of Holes in Boron-Doped Homoepitaxial Chemical Vapor Deposition Diamond Thin Films

• Published in: Japanese Journal of Applied Physics 2006-11, Vol.45 (11R), p.8571
• Main Authors: Tsukioka, Kunio, Okushi, Hideyo
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.45.8571

The temperature dependence of the Hall mobility µ H has been measured from 140 to 870 K for nine boron-doped homoepitaxial chemical vapor deposition (CVD) diamond thin films. The experimental µ H data are compared with their theoretical µ H values that are calculated by an iterative technique, assuming scattering by ionized impurities, acoustic deformation potential and nonpolar optical phonons. The donor concentration N D , the acoustic deformation potential constant E 1 and the coupling constant of nonpolar optical phonons D npo are used as fitting parameters. The experimental data of the hole concentration p are also analyzed by a fitting procedure. The acceptor concentration N A , the donor concentration N D , and the acceptor ionization energy E A are used as fitting parameters. The fitting analyses of µ H yielded an average D npo =(1.2±0.2)×10 12 eV/m. Considerable differences were observed between N D values estimated from the fitting analyses of µ H and those from the p -analyses. The average E 1 for the samples with little difference between the two types of N D is 14.5 eV, which is in agreement with that of a natural diamond of high quality. The average E A for the samples with a low or medium doping level is 0.365 eV, which is in good agreement with those in the literature. Some indications of the contribution of hopping conduction in the low-temperature range were observed.