Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO) treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode ( μ -LED) arrays is investigated. A thin Ag layer is deposited on the ITO-treated p-GaN surface by sputtering. SnO nanopart...

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Bibliographic Details
Published in:Photonics research (Washington, DC) DC), 2020-06, Vol.8 (6), p.1049
Main Authors: Lee, Jae Hyeok, Islam, Abu Bashar Mohammad Hamidul, Kim, Tae Kyoung, Cha, Yu-Jung, Kwak, Joon Seop
Format: Article
Language:English
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Summary:The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO) treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode ( μ -LED) arrays is investigated. A thin Ag layer is deposited on the ITO-treated p-GaN surface by sputtering. SnO nanoparticles originate from inhomogeneous Schottky barrier heights (SBHs) at Ag/p-GaN contact. Therefore, effective SBH is reduced, which causes carrier transport into the μ -LED to enhance. 10 nm thick ITO-treated μ -LEDs show better optoelectronic characteristics among fabricated μ -LEDs owing to improved ohmic contact and highly reflective p-type reflectors. Basically, SnO nanoparticles help to make good ohmic contact, which results in improved carrier transport into μ -LEDs and thus results in increased optoelectronic performances.
ISSN:2327-9125
2327-9125
DOI:10.1364/PRJ.385249