MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter a...

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Bibliographic Details
Published in:MRS Internet journal of nitride semiconductor research 2000, Vol.5 (S1), p.412-424
Main Authors: Han, Jung, Figiel, Jeffrey J., Petersen, Gary A., Myers, Samuel M., Crawford, Mary H., Banas, Michael A., Hearne, Sean J.
Format: Article
Language:English
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Summary:We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.
ISSN:1092-5783
1092-5783
DOI:10.1557/S1092578300004580