Effects of source gas molecules on N-H- and N-D-related defect formations in GaAsN grown by chemical beam epitaxy

The formation mechanism of N-H-related defects in GaAsN grown by chemical beam epitaxy (CBE) is studied on the basis of the isotope effects on the local vibration modes (LVMs) originating from N-H. When deuterated monomethylhydrazine (MMHy) is used as the N source, LVM signals from the nitrogen-deut...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2015-04, Vol.54 (4), p.41001-1-041001-4
Main Authors: Ikeda, Kazuma, Ohshita, Yoshio, Tanaka, Tomohiro, Honda, Takahiko, Inagaki, Makoto, Demizu, Koshiro, Kojima, Nobuaki, Suzuki, Hidetoshi, Machida, Hideaki, Sudoh, Hiroshi, Yamaguchi, Masafumi
Format: Article
Language:English
Subjects:
Bonding
Constants
Defects
Deuteration
Flow rate
Formations
Infrared radiation
Molecular beam epitaxy
Vibration mode
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Summary:The formation mechanism of N-H-related defects in GaAsN grown by chemical beam epitaxy (CBE) is studied on the basis of the isotope effects on the local vibration modes (LVMs) originating from N-H. When deuterated monomethylhydrazine (MMHy) is used as the N source, LVM signals from the nitrogen-deuterium bond (N-D) are obtained. However, there are still N-H peaks in the IR absorption spectra, which have intensities similar to those of N-D peaks. When the film is grown with deuterated triethylgallium (TEGa), there are no N-D peaks. The peak intensity at 2952 cm−1 increases with increasing tris(dimethylamino)arsenic (TDMAAs) flow rate, and that at 3098 cm−1 is almost constant regardless of the flow rate. These results indicate that H atoms in the N-H-related defects originate from H directly bonded to N in MMHy and CH3 in MMHy and/or H in TDMAAs, not from TEGa.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.54.041001