Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD

The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 °C. Transmission ele...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2002-04, Vol.299, p.14-19
Main Authors: Fonrodona, M, Soler, D, Asensi, J.M, Bertomeu, J, Andreu, J
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Cèl·lules solars
Deposició química en fase vapor
Nanocristalls
Nanocrystals
Oxigen
Oxygen
Pel·lícules fines
Silici
Silicon
Solar cells
Thin films
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Summary:The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 °C). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 °C. Transmission electron microscopy (TEM) images, together with secondary ion mass spectrometry (SIMS) measurements, suggested that no oxidation occurred in materials obtained at low filament temperature due to the high density of the tissue surrounding grain boundaries. A greater concentration of SiH 3 radicals formed at these temperatures seemed to be responsible for the higher density.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(01)00943-7