Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing...

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Bibliographic Details
Published in:Applied physics letters 2018-10, Vol.113 (18)
Main Authors: Blázquez, O., Frieiro, J. L., López-Vidrier, J., Guillaume, C., Portier, X., Labbé, C., Sanchis, P., Hernández, S., Garrido, B.
Format: Article
Language:English
Subjects:
Applied physics
Charge transport
Chemical Sciences
Computational Physics
Condensed Matter
Electromagnetism
Engineering Sciences
High resistance
Low resistance
Material chemistry
Materials
Materials Science
Micro and nanotechnologies
Microelectronics
Nanoelectronics
Nanoelectrònica
Optics
Oxidation
Pel·lícules fines
Photonic
Physics
Switching
Switching theory
Teoria de la commutació
Thin films
Zinc oxide
Òxid de zinc
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Summary:The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5046911