Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages

Substrate voltage (V ) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be affected by neutral/ionized donor and acceptor traps...

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Bibliographic Details
Published in:Micromachines (Basel) 2022-12, Vol.13 (12), p.2140
Main Authors: Lin, Yuan, Kao, Min-Lu, Weng, You-Chen, Dee, Chang-Fu, Chen, Shih-Chen, Kuo, Hao-Chung, Lin, Chun-Hsiung, Chang, Edward-Yi
Format: Article
Language:English
Subjects:
breakdown voltage
Buffers
Carbon
Contact resistance
Depletion
donor trap
dynamic on-resistance
Electric contacts
Electric fields
Electric potential
Electrons
Energy
Energy bands
Gallium nitrides
GaN
HEMT
High electron mobility transistors
Liquors
Nucleation
Organic chemicals
P-n junctions
Plasma etching
Semiconductor devices
substrate voltage
Superlattices
Transition layers
Vertical distribution
Voltage
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Summary:Substrate voltage (V ) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be affected by neutral/ionized donor and acceptor traps. As the donor/acceptor traps are excessively ionized or de-ionized by applying V , the depletion region between the unintentionally doped (UID)/Carbon-doped (C-doped) GaN layer may exhibit a behavior similar to the p-n junction. An applied negative V increases the concentration of both the ionized donor and acceptor traps, which increases the breakdown voltage (BV) by alleviating the non-uniform distribution of the vertical electric field. On the other hand, an applied positive V causes the energy band bending flattener to refill the ionized traps and slightly improves the dynamic R degradation. Moreover, the amount of electrons injected into the buffer stack layer from the front side (2DEG channel/Ohmic contact) and the back side (AlN nucleation layer/superlattice transition layer) are asymmetric. Therefore, different V can affect the conductivity of 2DEG through the field effect, buffer trapping effect, and charge redistribution, which can change the electrical performance of the device.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13122140