In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements

Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking ( f -Fu) and thiophene‒benzene stacking ( f...

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Published in:Nature communications 2023-10, Vol.14 (1), p.6250-6250, Article 6250
Main Authors: Li, Jinshi, Shen, Pingchuan, Zhuang, Zeyan, Wu, Junqi, Tang, Ben Zhong, Zhao, Zujin
Format: Article
Language:English
Subjects:
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Benzene
Channel gating
Computer memory
Electrical junctions
Electrochemistry
Electronics
Humanities and Social Sciences
Hydrocarbons
Interference
Memristors
Molecular electronics
multidisciplinary
Random numbers
Science
Science (multidisciplinary)
Stacking
Stochasticity
Switching
Synapses
Voltage
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Summary:Voltage-gated processing units are fundamental components for non-von Neumann architectures like memristor and electric synapses, on which nanoscale molecular electronics have possessed great potentials. Here, tailored foldamers with furan‒benzene stacking ( f -Fu) and thiophene‒benzene stacking ( f -Th) are designed to decipher electro-responsive through-space interaction, which achieve volatile memory behaviors via quantum interference switching in single-molecule junctions. f -Fu exhibits volatile turn-on feature while f -Th performs stochastic turn-off feature with low voltages as 0.2 V. The weakened orbital through-space mixing induced by electro-polarization dominates stacking malposition and quantum interference switching. f -Fu possesses higher switching probability and faster responsive time, while f -Th suffers incomplete switching and longer responsive time. High switching ratios of up to 91 for f -Fu is realized by electrochemical gating. These findings provide evidence and interpretation of the electro-responsiveness of non-covalent interaction at single-molecule level and offer design strategies of molecular non-von Neumann architectures like true random number generator. Molecular electronics holds promise for building memristor at nanoscales for in-memory computing. Li et al. design tailored foldamers with furan-benzene and thiophene-benzene stacking to achieve voltage triggered quantum interference switching for potential random number generator application.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-42028-5