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Off-Stoichiometry Thiol-Ene (OSTE) Micro Mushroom Forest: A Superhydrophobic Substrate

Superhydrophobic surfaces have been used in various fields of engineering due to their resistance to corrosion and fouling and their ability to control fluid movement. Traditionally, superhydrophobic surfaces are fabricated via chemical methods of changing the surface energy or mechanical methods of...

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Bibliographic Details
Published in:Micromachines (Basel) 2024-08, Vol.15 (9), p.1088
Main Authors: Li, Haonan, Zhang, Muyang, Liu, Yeqian, Yu, Shangneng, Li, Xionghui, Chen, Zejingqiu, Feng, Zitao, Zhou, Jie, He, Qinghao, Chen, Xinyi, Zhang, Huiru, Zhang, Jiaen, Zhang, Xingwei, Guo, Weijin
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Language:English
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Summary:Superhydrophobic surfaces have been used in various fields of engineering due to their resistance to corrosion and fouling and their ability to control fluid movement. Traditionally, superhydrophobic surfaces are fabricated via chemical methods of changing the surface energy or mechanical methods of controlling the surface topology. Many of the conventional mechanical methods use a top-to-bottom scheme to control the surface topolopy. Here, we develop a novel fabrication method of superhydrophobic substrates using a bottom-to-top scheme via polymer OSTE, which is a prototyping polymer material developed for the fabrication of microchips due to its superior photocuring ability, mechanical properties, and surface modification ability. We fabricate a superhydrophobic substrate by OSTE-OSTE micro mushroom forest via a two-step lithography process. At first, we fabricate an OSTE pillar forest as the mushroom stems; then, we fabricate the mushroom heads via backside lithography with diffused UV light. Such topology and surface properties of OSTE render these structures superhydrophobic, with water droplets reaching a contact angle of 152.9 ± 0.2°, a sliding angle of 4.1°, and a contact angle hysteresis of less than 0.5°. These characteristics indicate the promising potential of this substrate for superhydrophobic applications.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi15091088