Development of Heterojunction c-Si/a-Si1−xCx:H PIN Light-Emitting Diodes

In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si1−xCx:H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same...

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Bibliographic Details
Published in:Micromachines (Basel) 2022-11, Vol.13 (11), p.1948
Main Authors: Meneses-Meneses, Maricela, Moreno-Moreno, Mario, Morales-Sánchez, Alfredo, Ponce-Pedraza, Arturo, Flores-Méndez, Javier, Mendoza-Cervantes, Julio, Palacios-Huerta, Liliana
Format: Article
Language:English
Subjects:
Amorphous silicon
amorphous silicon-carbide
Bias
CMOS
electroluminescence
Energy
Glass substrates
Heterojunctions
Hydrogenation
Interfaces
Light emitting diodes
light-emitting diode
photoluminescence
Plasma enhanced chemical vapor deposition
R&D
Research & development
Silicon carbide
Silicon nitride
Silicon substrates
Silicon wafers
Thin films
Transistors
Waveguides
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Summary:In this work, we explored the feasibility of the fabrication of PIN light-emitting diodes (LEDs) consisting of heterojunctions of amorphous silicon-carbide (a-Si1−xCx:H) thin films and crystalline silicon wafers (c-Si). The objective is the future development of electro-photonic systems in the same c-Si wafer, containing transistors, sensors, LEDs and waveguides. Two different heterojunction LEDs were fabricated consisting of PIN and PIN+N structures, where a-Si1−xCx:H thin films were used as P-type and I-type layers, while an N-type c-Si substrate was used as an active part of the device. The amorphous layers were deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at a substrate temperature of 200 °C. The PIN device presented electroluminescence (EL) only in the forward bias, while the PIN+N device presented in both the forward and reverse biases. The EL in reverse bias was possible due to the addition of an N+-type a-Si:H layer between the c-Si substrate and the I-type a-Si1−xCx:H active layer. Likewise, the EL intensity of the PIN+N structure was higher than that of the PIN device in forward bias, indicating that the addition of the N-type a-Si:H layer makes electrons flow more efficiently to the I layer. In addition, both devices presented red EL in the full area, which is observed with the naked eye.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi13111948