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Optimized Near-Zero Quantization Method for Flexible Memristor Based Neural Network
Due to controllable conductance and non-volatility, flexible memristors are regarded as a key enabler for building artificial neural network (ANN)-based learning algorithms in flexible and wearable systems. However, the existing flexible memristors are suffering from limited number of conductance va...
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Published in: | IEEE access 2018-01, Vol.6, p.29320-29331 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Due to controllable conductance and non-volatility, flexible memristors are regarded as a key enabler for building artificial neural network (ANN)-based learning algorithms in flexible and wearable systems. However, the existing flexible memristors are suffering from limited number of conductance values, issues limiting large-scale integration, and insufficient accuracy that cannot support accurate computation of ANN. In this paper, solutions are proposed for the three major challenges of the flexible memristor; the feasibility of a three-layer fully connected neural network on MNIST and a 13-layer convolutional neural network (CNN) on CIFAR-10 using the flexible memristor based on single-walled carbon nanotubes network/polymer composite and hydrophilic Al 2 O 3 dielectric are studied. The evaluation result shows that in the fully connected neural network system, it is able to recognize MNIST with an accuracy above 90% after 4-bit quantization, 52.05% decrease in interconnection numbers in the circuit and up to 40% random error introduced, and in the CNN on CIFAR-10, the system can retain an accuracy above 86% with less than 4% accuracy loss after 5-bit quantization, 59.34% decrease in interconnection numbers in the circuit and up to 40% random error injected. |
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ISSN: | 2169-3536 2169-3536 |
DOI: | 10.1109/ACCESS.2018.2839106 |