Bloch Surface Waves Using Graphene Layers: An Approach toward In-Plane Photodetectors

[...]tunable planar optical components on BSW platforms have been demonstrated [30,31]. [...]the temperature was increased to 1000 °C, and the gases were fed into the chamber for graphene deposition. To perform the near-field measurements, we work with a multi-heterodyne scanning near-field optical...

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Bibliographic Details
Published in:Applied sciences 2018-03, Vol.8 (3), p.390
Main Authors: Dubey, Richa, Marchena, Miriam, Vosoughi Lahijani, Babak, Kim, Myun-Sik, Pruneri, Valerio, Herzig, Hans
Format: Article
Language:English
Subjects:
Advantages
Apertures
Bilayers
Bloch surface waves
Chemical vapor deposition
Electric fields
Gases
Glass substrates
Graphene
Light
Mapping
multilayer platform
Multilayers
Near field optical microscopes
optical characterization
Optical components
Optical microscopes
Optical properties
optics at the surface
Photonics
Propagation
scanning near-field optical microscopy
Semiconductors
Sensors
Silicon nitride
Surface waves
Thickness
two-dimensional optics
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Summary:[...]tunable planar optical components on BSW platforms have been demonstrated [30,31]. [...]the temperature was increased to 1000 °C, and the gases were fed into the chamber for graphene deposition. To perform the near-field measurements, we work with a multi-heterodyne scanning near-field optical microscope (MH-SNOM) in collection mode, which collects the evanescent electric field with a subwavelength aperture fiber probe. Because BSWs propagate at the interface of multilayers, near-field microscopy is an optimum tool for performing the spatial field distribution mapping locally. Thanks to the atomic layer thicknesses of graphene layers (3 angstroms and 6 angstrom for the monolayer and bilayer, respectively), graphene does not require an additional propagation constant other than the bare multilayer, and hence the coupling condition. [...]surface waves are directly absorbed by graphene layers without the necessity of external coupling devices, unlike silicon photonics.
ISSN:2076-3417
2076-3417
DOI:10.3390/app8030390