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Modified synthesis of BiVO4 and effect of doping (Mo or W) on its photoelectrochemical performance for water splitting
The photoelectrochemical (PEC) water splitting approach is an interesting concept due to abundant solar energy source and economical viability. However, it is challenging to realize the theoretical potential of photoactive materials mainly because of intricate interactions between sunlight, semicond...
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Published in: | Energy reports 2020-11, Vol.6, p.1963-1972 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The photoelectrochemical (PEC) water splitting approach is an interesting concept due to abundant solar energy source and economical viability. However, it is challenging to realize the theoretical potential of photoactive materials mainly because of intricate interactions between sunlight, semiconductors and liquid solutions. BiVO4 is one such promising material because of its favorable valence and conduction band position with a bandgap of ∼2.4 eV. In this work, thin films of BiVO4 (2 cm X 2 cm surface area) have been prepared through modified synthesis route by using robust USP technique. Further, BiVO4 doped with Mo or W elements of different atomic concentrations (3, 5, 7 and 9 at.%) have been prepared. The results indicate that doping of Mo and W in BiVO4 shown ∼2.5 times of higher photocurrent density as compared to pristine BiVO4. Poor electron–hole separation yield is one of the main limiting factors for BiVO4. The purpose of Mo or W-doping in this study is to increase the electron–hole separation yield which is resulted by improving the electron transport properties. Mo or W played a role of donor dopants by compensating cation vacancies or electrons, which contribute to increase in conductivity. Both structural and performance characterization of electrodes have been carried out to corroborate with the results. Increase in charge carrier density and decrease in charge transfer resistance unfolds the reason behind increase in photoelectrochemical performance.
•Comprehensive study of Mo and W doping into BiVO4 through modified synthesis route.•Both Mo and W doping showed nearly 2.5 times increase in photocurrent density.•Increase in charge carrier density and decrease in charge transfer resistance with doping.•Structural stability even at higher doping amounts.•Extensive coverage about synthesis, structural and performance characterization results. |
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ISSN: | 2352-4847 2352-4847 |
DOI: | 10.1016/j.egyr.2020.07.024 |