Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing

• Published in: Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2020-01, Vol.23 (4), p.1
• Main Authors: Costa, Erick Cardoso, Santos, Caroline Piesanti dos, Xavier, Fabio Antonio, Weingaertner, Walter Lindolfo
• Format: Article
• Language: English
• Subjects: Brittle-to-ductile transition; Brittleness; Chip formation; Compressive properties; Cutting parameters; Diamond machining; Diamond wire sawing; Ductile-brittle transition; ENGINEERING, CHEMICAL; Grooves; MATERIALS SCIENCE, MULTIDISCIPLINARY; METALLURGY & METALLURGICAL ENGINEERING; Monocrystalline silicon; Morphology; Phase transformation; Plastic deformation; Raman spectroscopy; Residual stress; Sawing; Silicon; Surface roughness; Wire
• ISSN: 1516-1439; 1980-5373; 1980-5373
• DOI: 10.1590/1980-5373-mr-2020-0013

The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in terms of surface morphology, surface roughness, material removal mechanism and residual stress (by Raman spectroscopy). The surface morphology exhibited evidence of both material removal mechanisms: the brittle mode and the ductile mode. The surface roughness increased with a high vf , which promoted the formation of craters on the sawn surface. On applying a higher vc , the surface roughness reduced, since this favored the formation of damage-free grooves. The Raman spectrum showed evidence of different residual crystalline phases on the sawn surface, which confirms the material removal mechanisms. An increase in vf , for the same vc , caused at reduction in the compressive stress, since the brittle mode predominated as the material removal mechanism. Maintaining vf constant and increasing vc results in higher compressive stress, caused by plastic deformation of the silicon during chip formation.