Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses

With the burgeoning developments in artificial intelligence, hardware implementation of artificial neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and transistors) with voltage thresholds were recently proposed as suitable candidates. However, t...

Full description

Saved in:
Bibliographic Details
Published in:Npj flexible electronics 2022-03, Vol.6 (1), p.1-9, Article 16
Main Authors: Cai, Yichen, Zhang, Jialong, Yan, Mengge, Jiang, Yizhou, Jawad, Husnain, Tian, Bobo, Wang, Wenchong, Zhan, Yiqiang, Qin, Yajie, Xiong, Shisheng, Cong, Chunxiao, Qiu, Zhi-Jun, Duan, Chungang, Liu, Ran, Hu, Laigui
Format: Article
Language:English
Subjects:
639/166/987
639/301/1005
Artificial intelligence
Artificial neural networks
Chemistry and Materials Science
Electronics and Microelectronics
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Hardware
Instrumentation
Materials Science
Memristors
Object recognition
Optical and Electronic Materials
Optoelectronic devices
Polymer Sciences
Synapses
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:With the burgeoning developments in artificial intelligence, hardware implementation of artificial neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and transistors) with voltage thresholds were recently proposed as suitable candidates. However, their development is hindered by the inherent integration issues of inorganic ferroelectrics, as well as poor properties of conventional organic ferroelectrics. In contrast to the conventional ferroelectric synapses, here we demonstrated a two-terminal ferroelectric synaptic device using a molecular ferroelectric (MF)/semiconductor interface. The interfacial resistance can be tuned via the polarization-controlled blocking effect of the semiconductor, owing to the high ferroelectricity and field amplification effect of the MF. Typical synaptic features including spike timing-dependent plasticity are substantiated. The introduction of the semiconductor also enables the attributes of optoelectronic synapse and in-sensor computing with high image recognition accuracies. Such interfaces may pave the way for the hardware implementation of multifunctional neuromorphic devices.
ISSN:2397-4621
2397-4621
DOI:10.1038/s41528-022-00152-0