Loading…

Thermal shock resistance enhancement by improved interfacial bonding for carbon/aluminium composites

Carbon/aluminium (C/Al) composites have the advantages of low density and high electrical conductivity, which have potential applications in aerospace, rail transportation and other fields. However, the unstable bonding of the C/Al interface and significant thermal expansion differences have resulte...

Full description

Saved in:
Bibliographic Details
Published in:High voltage 2022-10, Vol.7 (5), p.960-967
Main Authors: Wei, Wenfu, Huang, Zhanglin, Yin, Guofeng, Yang, Zefeng, Li, Xiaobo, Zuo, Haozi, Deng, Qin, Huang, Guizao, Ren, Junwen, Liao, Qianhua, Yang, Yan, Wu, Guangning
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Carbon/aluminium (C/Al) composites have the advantages of low density and high electrical conductivity, which have potential applications in aerospace, rail transportation and other fields. However, the unstable bonding of the C/Al interface and significant thermal expansion differences have resulted in risks of the composites' failure once suffering from severe thermal shock. In this work, the C/Al composites were prepared by the pressure impregnation method, and silicon (Si) was added to overcome the problems of C/Al non‐wettability and thermal expansion differences. The effects of mass fractions of doped silicon on the mechanical properties, electrical conductivity and thermal shock resistance of C/Al composites were also examined. Results show that the formed SiC interlayer has effectively enhanced the interfacial bonding and reduced the differences in the thermal expansion coefficient of each component. As a result, the thermal shock resistance of the composites has been remarkably improved, and the flexural strength could remain 90% of the original level after the thermal shock test, compared with 50% of that without Si doping.
ISSN:2397-7264
2397-7264
DOI:10.1049/hve2.12190