Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

• Published in: Scientific reports 2024-06, Vol.14 (1), p.14149-9, Article 14149
• Main Authors: Wang, Rigao, Shuang, Feng, Lin, Mingsong, Wei, Xiangfu, Fang, Zheng, She, Duan, Cai, Wei, Shi, Xiaowen, Chen, Mingyan
• Format: Article
• Language: English
• Subjects: 639/766/1130/2798; 639/925/927/1062; Boron; Carbon; Humanities and Social Sciences; multidisciplinary; Science; Science (multidisciplinary)
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-024-62721-9

Using the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 10 5 under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 10 4 . Our calculated transmission spectra have nicely explained why there’s a GMR up to 10 5 for spin-up current at biases of - 1.2 V, - 1.1 V, and - 1.0 V, and also accounted for a GMR up to 10 3 –10 5 for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 10 4 . Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.