Loading…
Probing Hot Electron Behaviors by Surface-Enhanced Raman Spectroscopy
Light-excited energetic electrons, or so-called hot electrons (HEs), in plasmonic metal nanostructures have received much attention in the past few years. Plasmonic metal nanostructures, acting as light absorbers with higher efficiency and adjustability than dye molecules and inorganic semiconductor...
Saved in:
Published in: | Cell reports physical science 2020-09, Vol.1 (9), p.100184, Article 100184 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Light-excited energetic electrons, or so-called hot electrons (HEs), in plasmonic metal nanostructures have received much attention in the past few years. Plasmonic metal nanostructures, acting as light absorbers with higher efficiency and adjustability than dye molecules and inorganic semiconductors, can generate HEs under specific light conditions. However, the overall efficiency of the plasmonic systems remain unsatisfactory. Therefore, it is important to study the generation and transfer processes of plasmon-induced HEs, which are necessary for efficient plasmon-enhanced applications. In this review, we summarize the basic concepts and mechanisms of HE generation and transportation, then highlight the use of in situ surface-enhanced Raman spectroscopy (SERS) as a probe for HE-induced chemical reactions. We also discuss the opportunities and remaining challenges in promoting fundamental understanding of, and practical applications for, HEs.
[Display omitted]
Hot electrons are highly relevant for light-induced processes. In this review, the generation and transfer of hot electrons, which determine the efficiency of plasmon-mediated processes, are discussed in light of spectroscopic studies, especially those using surface-enhanced Raman spectroscopy. |
---|---|
ISSN: | 2666-3864 2666-3864 |
DOI: | 10.1016/j.xcrp.2020.100184 |