Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p–n Heterojunction Photodetectors

Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctio...

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Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2024-05, Vol.14 (10), p.884
Main Authors: Pan, Baojun, Dou, Zhenjun, Su, Mingming, Li, Ya, Wu, Jialing, Chang, Wanwan, Wang, Peijian, Zhang, Lijie, Zhao, Lei, Zhao, Mei, Wang, Sui-Dong
Format: Article
Language:English
Subjects:
Antimony telluride
Chemical vapor deposition
Energy gap
Epitaxial growth
Heterojunctions
Heterostructures
Laser etching
Mica
Optoelectronic devices
P-n junctions
P-type semiconductors
photodetector
p–n heterojunction
Sb2Te3/WS2 vertical heterojunction
Scanning electron microscopy
Semiconductors
Silicon dioxide
Silicon substrates
Spectrum analysis
substrate-selective growth
Sulfur
Transition metal compounds
Tungsten disulfide
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Summary:Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p–n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano14100884