Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide

Although the synthesis of molybdenum disulfide (MoS ) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS through chemical vapor deposition (CVD) is studi...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-11, Vol.13 (23), p.3056
Main Authors: Lu, Jie, Zheng, Miaomiao, Liu, Jinxin, Zhang, Yufeng, Zhang, Xueao, Cai, Weiwei
Format: Article
Language:English
Subjects:
Analysis
Annealing
Chemical vapor deposition
Crystals
Electron microscopes
Electron microscopy
Influence
Molybdenum
Molybdenum disulfide
monolayer MoS2
Monolayers
Morphology
Nanoribbons
Orientation
Properties
Sapphire
sapphire step height
Sapphires
Scanning electron microscopy
Second harmonic generation
Structure
Substrates
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Summary:Although the synthesis of molybdenum disulfide (MoS ) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS through chemical vapor deposition (CVD) is studied. The results show that MoS exhibits a highly oriented triangular grain on a low-step (0.44-1.54 nm) substrate but nanoribbons with a consistent orientation on a high-step (1.98-3.30 nm) substrate. Triangular grains exhibit cross-step growth, with one edge parallel to the step edge, while nanoribbons do not cross steps and possess the same orientation as the step. Scanning electron microscopy (SEM) reveals that nanoribbons are formed by splicing multiple grains, and the consistency of the orientation of these grains is demonstrated with a transmission electron microscope (TEM) and second-harmonic generation (SHG). Furthermore, our CP2K calculations, conducted using the generalized gradient approximation and the Perdew-Burke-Ernzerhof (PBE) functional with D3 (BJ) correction, show that MoS domains prefer to nucleate at higher steps, while climbing across a higher step is more difficult. This work not only sheds light on the growth mechanism of monolayer MoS but also promotes its applications in electrical, optical, and energy-related devices.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13233056