Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks

Quasi-one-dimensional (1D) topological insulators hold the potential of forming the basis of novel devices in spintronics and quantum computing. While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high vacuum lithograp...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-01, Vol.13 (2), p.354
Main Authors: Jalil, Abdur Rehman, Schüffelgen, Peter, Valencia, Helen, Schleenvoigt, Michael, Ringkamp, Christoph, Mussler, Gregor, Luysberg, Martina, Mayer, Joachim, Grützmacher, Detlev
Format: Article
Language:English
Subjects:
Composite materials
Computer architecture
Crystal growth
Epitaxy
Etching
Fabrication
Growth rate
High vacuum
Microscopy
Molecular beam epitaxy
Nanostructure
Nanowires
Quantum computing
quasi-1D network
Scanning transmission electron microscopy
selective area growth
Selectivity
Semiconductors
Silicon substrates
Spintronics
Structural analysis
Thin films
Topological insulators
topological nanostructures
Transmission electron microscopy
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Summary:Quasi-one-dimensional (1D) topological insulators hold the potential of forming the basis of novel devices in spintronics and quantum computing. While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high vacuum lithography techniques, such as selective area epitaxy (SAE), provide all the necessary ingredients for their refinement into scalable device architectures. In this work, high-quality SAE of quasi-1D topological insulators on templated Si substrates is demonstrated. After identifying the narrow temperature window for selectivity, the flexibility and scalability of this approach is revealed. Compared to planar growth of macroscopic thin films, selectively grown regions are observed to experience enhanced growth rates in the nanostructured templates. Based on these results, a growth model is deduced, which relates device geometry to effective growth rates. After validating the model experimentally for various three-dimensional topological insulators (3D TIs), the crystal quality of selectively grown nanostructures is optimized by tuning the effective growth rates to 5 nm/h. The high quality of selectively grown nanostructures is confirmed through detailed structural characterization via atomically resolved scanning transmission electron microscopy (STEM).
ISSN:2079-4991
2079-4991
DOI:10.3390/nano13020354