Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres

Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window. Laser processing can impose large temperature gradients, an ability that has been used to improve the uniformity of unary fi...

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Bibliographic Details
Published in:Nature communications 2019-04, Vol.10 (1), p.1790-1790, Article 1790
Main Authors: Song, S., Lønsethagen, K., Laurell, F., Hawkins, T. W., Ballato, J., Fokine, M., Gibson, U. J.
Format: Article
Language:English
Subjects:
140/125
147/135
639/301/1019
639/301/1019/1020/1093
639/624/399
639/766/930/12
Alloy systems
Carbon dioxide
Carbon dioxide lasers
Embedding
Fabrication
Fibers
Gallium antimonides
Humanities and Social Sciences
Infrared radiation
Laser processing
Lasers
Light sources
Luminescence
multidisciplinary
Optical fibers
Optical properties
Optoelectronics
Photoluminescence
Photonics
Photons
Science
Science (multidisciplinary)
Silicon
Temperature gradients
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Summary:Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window. Laser processing can impose large temperature gradients, an ability that has been used to improve the uniformity of unary fibre cores, and to inscribe compositional variations in alloy systems. Interest in an integrated light-emitting element suggests a move from Group IV to III-V materials, or a core that contains both. This paper describes the fabrication of GaSb/Si core fibres, and a subsequent CO 2 laser treatment that aggregates large regions of GaSb without suppressing room temperature photoluminescence. The ability to isolate a large III-V crystalline region within the Si core is an important step towards embedding semiconductor light sources within infrared light-transmitting silicon optical fibre. Semiconductor-core optical fibres are of interest for their non-linear optical and electro-optical properties. Here, GaSb/Si composite-core optical fibres were fabricated and a CO 2 laser was used to facilitate controlled GaSb segregation within the silicon. This has implications for embedding light sources in IR-transmitting fibers
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-019-09835-1