Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, stru...

Full description

Saved in:
Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2022-11, Vol.12 (21), p.3890
Main Authors: Zhang, Xiao-Ying, Han, Jing, Peng, Duan-Chen, Ruan, Yu-Jiao, Wu, Wan-Yu, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang, Zhu, Wen-Zhang
Format: Article
Language:English
Subjects:
Atomic force microscopy
Atomic layer epitaxy
Capacitance
Chemical properties
crystalline behavior
Crystallinity
Dielectric breakdown
Dielectric constant
Electric fields
Electrical measurement
Electrical properties
Gases
Hafnium
Hafnium oxide
HfO2 films
Investigations
Ion beams
Ligands
Microscopy
Molecular beam epitaxy
Morphology
Organic chemicals
Photoelectron spectroscopy
Photoelectrons
Plasma
Scanning electron microscopy
substrate temperature
Substrates
Temperature dependence
Thin films
Voltage
X ray photoelectron spectroscopy
X-ray diffraction
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO2 films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. The substrate temperature dependent electrical properties of PEALD–HfO2 films were obtained by capacitance–voltage and current–voltage measurements. GIXRD patterns and XRR investigations show that increasing the substrate temperature improved the crystallinity and density of HfO2 films. The crystallinity of HfO2 films has a major effect on electrical properties of the films. HfO2 thin film deposited at 300 °C possesses the highest dielectric constant and breakdown electric field.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano12213890