Fabrication of highly oriented Mn4N/Pt epitaxial bilayer structure on MgO(001) for spintronics applications

Magnetization control by electric current or spin current is an attractive technology with potential applications in memory and logic devices, and Mn4N has attracted much attention in recent years as a candidate material for current-induced magnetization switching and magnetic domain wall motion, as...

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Bibliographic Details
Published in:AIP advances 2023-10, Vol.13 (10), p.105219-105219-6
Main Authors: Yasuda, Tomohiro, Horiuchi, Takumi, Suemasu, Takashi
Format: Article
Language:English
Subjects:
Bilayers
Domain walls
Electric currents
Electron diffraction
Epitaxial growth
Hall effect
Heavy metals
High energy electrons
Hypothetical particles
Magnesium oxide
Magnetic domains
Magnetization
Materials selection
Memory devices
Particle theory
Spintronics
Thin films
Topology
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Summary:Magnetization control by electric current or spin current is an attractive technology with potential applications in memory and logic devices, and Mn4N has attracted much attention in recent years as a candidate material for current-induced magnetization switching and magnetic domain wall motion, as well as a skyrmion material. For these applications, a bilayer structure of Mn4N and heavy metals must be formed with high crystalline quality. In this study, we have achieved the epitaxial growth of Mn4N thin films on MgO(001) with a Pt underlayer. The reflection high-energy electron diffraction images and x-ray diffraction ω-rocking curves show that the Mn4N films fabricated on the Pt underlayers exhibit higher crystalline quality than the Mn4N films directly formed on the MgO. Furthermore, anomalous Hall effect loops with bump-like structures were observed. This is considered to be due to the topological spin texture. The Mn4N/Pt epitaxial bilayer structure has potential for use in spin–orbit torque applications and is a candidate configuration for topological spin textures.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0165791