Studying mechanism of anisotropic crack generation on C-, R-, A-, and M-planes of sapphire during ultra-precision orthogonal cutting using a visualized slip/fracture activation model

• Published in: Nanotechnology and Precision Engineering 2024-12, Vol.7 (4), p.043006-043006-18
• Main Authors: Suk Bum Kwon, Sangkee Min
• Format: Article
• Language: English
• ISSN: 2589-5540
• DOI: 10.1063/10.0026318

With the growing demand for the fabrication of microminiaturized components, a comprehensive understanding of material removal behavior during ultra-precision cutting has become increasingly significant. Single-crystal sapphire stands out as a promising material for microelectronic components, ultra-precision lenses, and semiconductor structures owing to its exceptional characteristics, such as high hardness, chemical stability, and optical properties. This paper focuses on understanding the mechanism responsible for generating anisotropic crack morphologies along various cutting orientations on four crystal planes (C-, R-, A-, and M-planes) of sapphire during ultra-precision orthogonal cutting. By employing a scanning electric microscope to examine the machined surfaces, the crack morphologies can be categorized into three distinct types on the basis of their distinctive features: layered, sculptured, and lateral. To understand the mechanism determining crack morphology, visualized parameters related to the plastic deformation and cleavage fracture parameters are utilized. These parameters provide insight into both the likelihood and direction of plastic deformation and fracture system activations. Analysis of the results shows that the formation of crack morphology is predominantly influenced by the directionality of crystallographic fracture system activation and by the interplay between fracture and plastic deformation system activations.