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Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy
Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga 2 O 3 has unveiled impressive opportunities for exploring novel physics and device concepts. This study presents the epitaxial growth of 2D β-In 2 Se 3 /3D β-Ga 2 O 3 heterostructures on c-Sapphire substrates by plasma-assiste...
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| Published in: | Scientific reports 2024-03, Vol.14 (1), p.5146-5146, Article 5146 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
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| Summary: | Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga
2
O
3
has unveiled impressive opportunities for exploring novel physics and device concepts. This study presents the epitaxial growth of 2D β-In
2
Se
3
/3D β-Ga
2
O
3
heterostructures on c-Sapphire substrates by plasma-assisted molecular beam epitaxy. Firstly, we employed a temperature-dependent two-step growth process to deposit Ga
2
O
3
and obtained a phase-pure
(
2
¯
01
)
β-Ga
2
O
3
film on c-Sapphire. Interestingly, the in-situ reflective high-energy electron diffraction (RHEED) patterns observed from this heterostructure revealed the in-plane ‘b’ lattice constant of β-Ga
2
O
3
~ 3.038Å. In the next stage, for the first time, 2D In
2
Se
3
layers were epitaxially realized on 3D β-Ga
2
O
3
under varying substrate temperatures (T
sub
) and Se/In flux ratios (R
VI/III
). The deposited layers exhibited (00
l
) oriented β-In
2
Se
3
on
(
2
¯
01
)
β-Ga
2
O
3
/c-Sapphire with the epitaxial relationship of
[
11
2
¯
0
]
β-In
2
Se
3
|| [010] β-Ga
2
O
3
and
[
10
1
¯
0
]
β-In
2
Se
3
|| [102] β-Ga
2
O
3
as observed from the RHEED patterns. Also, the in-plane ‘a’ lattice constant of β-In
2
Se
3
was determined to be ~ 4.027Å. The single-phase β-In
2
Se
3
layers with improved structural and surface quality were achieved at a T
sub
~ 280 °C and R
VI/III
~ 18. The microstructural and detailed elemental analysis further confirmed the epitaxy of 2D layered β-In
2
Se
3
on 3D β-Ga
2
O
3
, a consequence of the quasi-van der Waals epitaxy. Furthermore, the β-Ga
2
O
3
with an optical bandgap (E
g
) of ~ 5.04 eV (deep ultraviolet) when integrated with 2D β-In
2
Se
3
, E
g
~ 1.43eV (near infra-red) can reveal potential applications in the optoelectronic field. |
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| ISSN: | 2045-2322 2045-2322 |
| DOI: | 10.1038/s41598-024-55830-y |