Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance o...

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Bibliographic Details
Published in:Nature communications 2016-06, Vol.7 (1), p.11927-11927, Article 11927
Main Authors: Burgess, Tim, Saxena, Dhruv, Mokkapati, Sudha, Li, Zhe, Hall, Christopher R., Davis, Jeffrey A., Wang, Yuda, Smith, Leigh M., Fu, Lan, Caroff, Philippe, Tan, Hark Hoe, Jagadish, Chennupati
Format: Article
Language:English
Subjects:
140/125
639/301/119/1000/1016
639/766/400
639/925/357
Electrons
Humanities and Social Sciences
Lifetime
multidisciplinary
Nanomaterials
Nanowires
Science
Science (multidisciplinary)
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Summary:Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications. Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al. employ controlled impurity doping to increase the rate of radiative recombination.
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms11927